![]() An extraction and optimization studies of the IGBT model parameters using a stochastic algorithm implemented in Matlab are presented. This model is parameterized using the constructor datasheet to ensure a good representation of the dynamic and static IGBT behaviors. An electrical IGBT behavior model using the Simscape Electronics library components is developed and analyzed. In this paper, a power insulated-gate bipolar transistor (IGBT) model using MATLAB graphical software is reproduced. The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |